[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Vuolevi et al., 2002 - Google Patents

Extraction of a nonlinear AC FET model using small-signal S-parameters

Vuolevi et al., 2002

View PDF
Document ID
17172342643629025146
Author
Vuolevi J
Rahkonen T
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

The nonlinearities of an RF FET can be obtained by a set of small-signal circuit elements extracted over a range of terminal voltages and temperatures. This study used pulsed S- parameter measurements on a 3/spl times/3 DC-bias-point grid at two different temperatures …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

Similar Documents

Publication Publication Date Title
Dunleavy et al. Modeling GaN: powerful but challenging
Razavi CMOS technology characterization for analog and RF design
Root Future device modeling trends
Kang et al. Linearity analysis of CMOS for RF application
Roblin et al. New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects
Filicori et al. Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's
Aikio et al. Detailed distortion analysis technique based on simulated large-signal voltage and current spectra
Schlumpf et al. A fast modulator for dynamic supply linear RF power amplifier
Negre et al. Reliability characterization and modeling solution to predict aging of 40-nm MOSFET DC and RF performances induced by RF stresses
Xu et al. Advances in artificial neural network models of active devices
Vuolevi et al. Extraction of a nonlinear AC FET model using small-signal S-parameters
Alim et al. Temperature dependence of the Taylor series coefficients and intermodulation distortion characteristics of GaN HEMT
Raffo et al. Waveform engineering: State‐of‐the‐art and future trends
Martinez et al. Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs
Gao et al. Scalable small-signal and noise modeling for deep-submicrometer MOSFETs
Martinez et al. Benchmarking measurement-based large-signal FET models for GaN HEMT devices
Callet et al. A new nonlinear HEMT model for AlGaN/GaN switch applications
Vuolevi et al. Analysis of third-order intermodulation distortion in common-emitter BJT and HBT amplifiers
Koh et al. A spline large-signal FET model based on bias-dependent pulsed IV measurement
Huang et al. A general dimension reduction method for the dispersion modeling of semiconductor devices
Darwish et al. Temperature dependence of GaN HEMT small signal parameters
Wei et al. Table-based dynamic FET model assembled from small-signal models
Loechelt et al. A computational load-pull system for evaluating RF and microwave power amplifier technologies
Brady et al. Large-signal FET modeling based on pulsed measurements
Gillease et al. Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs