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Ren, 2021 - Google Patents

Process Development and Process Window Investigation of Copper-Silicon Dioxide Die-to-Wafer (D2W) Hybrid Bonding

Ren, 2021

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Document ID
17030448082210207809
Author
Ren H
Publication year

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Abstract Die-to-wafer (D2W) heterogeneous integration using thermal compression bonding (TCB) faces a serious issues of Cu surface oxidation, and it is uncapable of large-die assembly. Hybrid bonding, on the other hand, is considered as a candidate to replace TCB …
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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