Liang et al., 2017 - Google Patents
Near‐infrared‐light photodetectors based on one‐dimensional inorganic semiconductor nanostructuresLiang et al., 2017
- Document ID
- 17055029421809727657
- Author
- Liang F
- Wang J
- Li Z
- Luo L
- Publication year
- Publication venue
- Advanced Optical Materials
External Links
Snippet
Recently, near‐infrared light photodetectors (NIRPDs) have attracted increasing interest due to their promising applications in both military and civil purposes. One‐dimensional inorganic semiconductor nanostructures (NSs) have unique electrical and optical properties …
- 239000004065 semiconductor 0 title abstract description 43
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- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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