[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Bouroushian et al., 1993 - Google Patents

Influence of heat treatment on structure and properties of electrodeposited CdSe of Cd (Te, Se) semiconducting coatings

Bouroushian et al., 1993

Document ID
17053114932988034088
Author
Bouroushian M
Loizos Z
Spyrellis N
Maurin G
Publication year
Publication venue
Thin solid films

External Links

Snippet

CdSe and mixed CdSe and CdTe semiconducting thin films, prepared by cathodic electrodeposition from an acid sulphate solution, containing selenium and tellurium oxides in Various amounts, were submitted to a to a thermal treatment at temperatures ranging …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/543—Solar cells from Group II-VI materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage
    • Y02E60/12—Battery technology
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of or comprising active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Similar Documents

Publication Publication Date Title
Bouroushian et al. Influence of heat treatment on structure and properties of electrodeposited CdSe of Cd (Te, Se) semiconducting coatings
Pottier et al. Preparation of polycrystalline thin films of CuInSe2 by electrodeposition
Ponomarev et al. Electrochemical deposition of MoS2 thin films by reduction of tetrathiomolybdate
Lokhande et al. Electrodeposition of thin film semiconductors
Salim et al. Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells
Loizos et al. Electrochemical synthesis of semiconducting CdSe thin films
Li et al. Electrodeposition and characterization of copper bismuth selenide semiconductor thin films
Ishizaki et al. Structural, optical and electrical properties of ZnTe thin films electrochemically deposited from a citric acid aqueous solution
Loizos et al. Semiconducting CdSex, Te1− x thin films prepared by electrodeposition
Bouroushian et al. Hexagonal cadmium chalcogenide thin films prepared by electrodeposition from near-boiling aqueous solutions
Aliyev et al. Electrochemical Studies on the Cathodic Electrodeposition of n-type semiconductor CdS thin film from Thiosulfate Acidic Aqueous Solution
JPH0685444B2 (en) Cd-rich solar cell including Hg-lower 1-X Cd-lower x Te layer and method of manufacturing the same
Danaher et al. The kinetics of the electrodeposition of cadmium telluride
Bouroushian et al. Structure and properties of CdSe and CdSexTe1–x electrolytic deposits on Ni and Ti cathodes: influence of the acidic bath pH
Khare et al. Electrodeposition and heat treatment of CuIn Se2 films
Königstein et al. Mechanistic studies on the electrodeposition of ZnTe
Li et al. Electrodeposition of mesoporous CdTe films with the aid of citric acid from lyotropic liquid crystalline phases
Loizos et al. Cadmium chalcogenide semiconducting thin films prepared by electrodeposition from boiling aqueous electrolytes
Mengoli et al. Synthesis of InAs and InAs1-xSbx from electrodeposited layers of indium, arsenic and As Sb alloy
Gajanayake et al. Altering NH4OH concentration in producing chemical bath deposited CdS to steadily support electrodeposited CdTe
Edamura et al. Preparation and properties of electrodeposited ternary CdSxSe1-x and ZnxCd1-xS films
Bouroushian et al. Electrocrystallization of CdSe upon various substrates. Structural arrangement and photoelectrochemical performance
Bouroushian et al. Substrate effect on the structure and properties of electrodeposited CdSe and Cd (Se, Te) coatings
Kampmann et al. Characterization of< 111> cadmium telluride electrodeposited on cadmium sulphide
Ojo et al. Effect of gallium doping on the characteristic properties of polycrystalline cadmium telluride thin film