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Circir et al., 2019 - Google Patents

Optimization of in-device depleted passivation layer for InGaAs photodetectors

Circir et al., 2019

Document ID
16922335464011494720
Author
Circir K
Dolas M
Kocaman S
Publication year
Publication venue
Infrared Physics & Technology

External Links

Snippet

Abstract Lattice matched InGaAs/InP photodetector structure with an InP layer for in-device passivation purposes has been analyzed numerically, an optimized design for mesa type devices has been proposed and experimental verification has been shown. Structural and …
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    • H01L31/103Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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    • H01L31/0304Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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