Takahasi, 2018 - Google Patents
In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductorsTakahasi, 2018
- Document ID
- 16988859438282596809
- Author
- Takahasi M
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III–V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing …
- 238000011065 in-situ storage 0 title abstract description 35
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation
- G01N23/207—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation by means of diffractometry using detectors, e.g. using an analysing crystal or a crystal to be analysed in a central position and one or more displaceable detectors in circumferential positions
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