Ramezany, 2018 - Google Patents
Nano-Electromechanical Active Resonant DevicesRamezany, 2018
View PDF- Document ID
- 16801864866063731049
- Author
- Ramezany A
- Publication year
External Links
Snippet
Over the last three decades, various functionalities ranging from frequency selection and timing to sensing and actuation have been successfully demonstrated for microscale and nanoscale electromechanical systems. Although such capabilities complement solid-state …
- 230000003321 amplification 0 abstract description 71
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of micro-electro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of micro-electro-mechanical resonators
- H03H9/02338—Suspension means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on micro-sensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezo-electric, electrostrictive, or magnetostrictive of micro-electro-mechanical resonators
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Pillai et al. | Piezoelectric MEMS resonators: A review | |
Abdolvand et al. | Micromachined resonators: A review | |
Rinaldi et al. | 5-10 GHz AlN contour-mode nanoelectromechanical resonators | |
Mattila et al. | A 12 MHz micromechanical bulk acoustic mode oscillator | |
Ivaldi et al. | 50 nm thick AlN film-based piezoelectric cantilevers for gravimetric detection | |
Weinstein et al. | Internal dielectric transduction in bulk-mode resonators | |
Lee et al. | 5.4-MHz single-crystal silicon wine glass mode disk resonator with quality factor of 2 million | |
Kaajakari et al. | Stability of wafer level vacuum encapsulated single-crystal silicon resonators | |
Mu et al. | Dual mode acoustic wave sensor for precise pressure reading | |
Pourkamali et al. | Low-impedance VHF and UHF capacitive silicon bulk acoustic-wave resonators—Part II: Measurement and characterization | |
Wu et al. | A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer | |
Kropelnicki et al. | CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor | |
Zhang et al. | Strain-modulated dissipation in two-dimensional molybdenum disulfide nanoelectromechanical resonators | |
Chen et al. | Electric field stiffening effect in c-oriented aluminum nitride piezoelectric thin films | |
Khaderbad et al. | Electrical actuation and readout in a nanoelectromechanical resonator based on a laterally suspended zinc oxide nanowire | |
Li et al. | Differentially piezoresistive sensing for CMOS-MEMS resonators | |
Lynes et al. | Influence of a tailored oxide interface on the quality factor of microelectromechanical resonators | |
Tabrizian et al. | Dual-mode vertical membrane resonant pressure sensor | |
Xie et al. | A passively temperature-compensated dual-frequency AlN-on-silicon resonator for accurate pressure sensing | |
Palaniapan et al. | Nonlinear behavior of SOI free-free micromechanical beam resonator | |
Mahdavi et al. | Thin film piezoelectric-on-silicon elliptical resonators with low liquid phase motional resistances | |
Tittonen et al. | Electrostatic and RF-properties of MEMS structures | |
Ramezany | Nano-Electromechanical Active Resonant Devices | |
Mastropaolo et al. | Piezo-electrically actuated and sensed silicon carbide ring resonators | |
Chandrahalim et al. | PZT transduction of high-overtone contour-mode resonators |