Lange et al., 2002 - Google Patents
Magnetic actuation and MOS-transistor sensing for CMOS-integrated resonatorsLange et al., 2002
View PDF- Document ID
- 16858544662125653542
- Author
- Lange D
- Hagleitner C
- Herzog C
- Brand O
- Baltes H
- Publication year
- Publication venue
- Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No. 02CH37266)
External Links
Snippet
Presents a magnetic actuation scheme combined with a piezoresistive MOS-transistor sensing technique for CMOS-integrated resonators. It was developed for a cantilever resonator with on-chip amplifier, but is broadly applicable. The high efficiency of …
- 238000000034 method 0 abstract description 14
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
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