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Perrosé et al., 2024 - Google Patents

Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates

Perrosé et al., 2024

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Document ID
16850050936236097656
Author
Perrosé M
Alba P
Reboh S
Lugo J
Plantier C
Cardinael P
Rack M
Allibert F
Milesi F
Garros X
Raskin J
Publication year
Publication venue
2024 IEEE/MTT-S International Microwave Symposium-IMS 2024

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Snippet

An original method to locally fabricate interface passivation layers embedded in Silicon-on- Insulator substrates is presented. This method consists in creating defects under the Buried Oxide (BOX) thanks to helium implantation followed by thermal annealing. The …
Continue reading at dial.uclouvain.be (PDF) (other versions)

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