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Tiwari et al., 2007 - Google Patents

Solution-processed n-type organic field-effect transistors with high on/off current ratios based on fullerene derivatives

Tiwari et al., 2007

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Document ID
16726137380389271900
Author
Tiwari S
Namdas E
Rao V
Fichou D
Mhaisalkar S
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative 6-1-(3-(2-thienylethoxycarbonyl)-propyl)-5-1-phenyl-5, 6-C61 (TEPP) and phenyl- C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported …
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