Wallburg et al., 2022 - Google Patents
A material removal coefficient for diamond wire sawing of siliconWallburg et al., 2022
View PDF- Document ID
- 16774060921813655782
- Author
- Wallburg F
- Kuna M
- Budnitzki M
- Schoenfelder S
- Publication year
- Publication venue
- Wear
External Links
Snippet
Diamond wire sawing (DWS) of silicon wafers has replaced loose abrasive sawing (LAS) within a very short time, mainly due to the enormous cost pressure in the photovoltaic industry. However, the LAS process is still much better investigated and understood from a …
- 239000000463 material 0 title abstract description 59
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wallburg et al. | A material removal coefficient for diamond wire sawing of silicon | |
Wu | Wire sawing technology: A state-of-the-art review | |
Woon et al. | Investigations of tool edge radius effect in micromachining: a FEM simulation approach | |
Li et al. | Evolution and equivalent control law of surface roughness in shear-thickening polishing | |
Gao et al. | Material removal and surface generation mechanisms in diamond wire sawing of silicon crystal | |
Li et al. | Analytical modeling of ground surface topography in monocrystalline silicon grinding considering the ductile-regime effect | |
Liu et al. | Molecular dynamics simulation of silicon carbide nanoscale material removal behavior | |
Duan et al. | SPH and FE coupled 3D simulation of monocrystal SiC scratching by single diamond grit | |
Zhang et al. | Fundamental investigation of ultra-precision ductile machining of tungsten carbide by applying elliptical vibration cutting with single crystal diamond | |
Wallburg et al. | Experimental and numerical analysis of scratching induced damage during diamond wire sawing of silicon | |
Cai et al. | Study of the temperature and stress in nanoscale ductile mode cutting of silicon using molecular dynamics simulation | |
Ozturk et al. | A comprehensive study on slicing processes optimization of silicon ingot for photovoltaic applications | |
Anderson et al. | Comparison of spherical and truncated cone geometries for single abrasive-grain cutting | |
Cui et al. | Nano-machining of materials: understanding the process through molecular dynamics simulation | |
Wan et al. | Investigation on ultra-precision lapping of A-plane and C-plane sapphires | |
Zhou et al. | Atomic-scale study of vacancy defects in SiC affecting on removal mechanisms during nano-abrasion process | |
Pala et al. | Characterization of electroplated diamond wires and the resulting workpiece quality in silicon sawing | |
Wu et al. | Effect of reciprocating wire slurry sawing on surface quality and mechanical strength of as-cut solar silicon wafers | |
Kovalchenko et al. | Suppressing scratch-induced brittle fracture in silicon by geometric design modification of the abrasive grits | |
Cui et al. | Damage mechanics analysis of failure mechanisms for ceramic cutting tools in intermittent turning | |
James et al. | A molecular dynamics study of the effect of impact velocity, particle size and angle of impact of abrasive grain in the Vibration Assisted Nano Impact-machining by Loose Abrasives | |
Meng et al. | Influence of microstructure on the diamond-machinability of hot-pressed silicon carbide: A molecular dynamics study | |
Sekhar et al. | The impact of silicon brick polishing on thin (120 μm) silicon wafer sawing yields and fracture strengths in diamond-wire sawing | |
Zhou et al. | Polishing process of 4H-SiC under different pressures in a water environment | |
Wang et al. | Modeling and simulation of phase transformation and crack formation during scribing of mono-crystalline silicon |