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Lynch et al., 2019 - Google Patents

Design considerations for high voltage SiC power devices: An experimental investigation into channel pinching of 10kV SiC junction barrier schottky (JBS) diodes

Lynch et al., 2019

Document ID
16515299874447823807
Author
Lynch J
Yun N
Sung W
Publication year
Publication venue
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

External Links

Snippet

This paper reports on the design, fabrication and electrical characteristics of 10kV 4H-SiC JBS diodes. Both Ni and Ti JBS diodes were fabricated on 7*10^14\mathbfcm^-3 doped, 95μm-thick n-type epi on 6-inch 4H-SiC n+ substrates. SEM imaging and SIMS profiling …
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