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Bong Kang et al., 1994 - Google Patents

Comparison of ultrathin SiO2 films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2 ambient

Bong Kang et al., 1994

Document ID
16321855753907141921
Author
Bong Kang S
Kim S
Byun J
Kim H
Publication year
Publication venue
Applied physics letters

External Links

Snippet

An N2O ambient allowed the oxidation rate to be substantially low while forming an oxynitride layer at the early stage of oxidation, and also provided nitrogen atoms to the oxide film during further oxidation. Both the formation of an oxynitride layer in the interface of SiO2 …
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