[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Vu et al., 2020 - Google Patents

Simulation within a DFT framework and experimental study of the valence-band electronic structure and optical properties of quaternary selenide Cu2HgSnSe4

Vu et al., 2020

Document ID
16355840236460021715
Author
Vu T
Lavrentyev A
Gabrelian B
Tong H
Tkach V
Parasyuk O
Khyzhun O
Publication year
Publication venue
Optik

External Links

Snippet

We report data of simulation within a density functional theory (DFT) framework, employing different approaches for exchange correlation (XC) potential, of the electronic structure and experimental verification of these band-structure calculations using X-ray photoelectron …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Similar Documents

Publication Publication Date Title
Vu et al. A theoretical and experimental study of the valence-band electronic structure and optical constants of quaternary copper mercury tin sulfide, Cu2HgSnS4, a potential material for optoelectronics and solar cells
Vu et al. Simulation within a DFT framework and experimental study of the valence-band electronic structure and optical properties of quaternary selenide Cu2HgSnSe4
Xie et al. Optical properties of chemical vapor deposition-grown PtSe2 characterized by spectroscopic ellipsometry
Egbo et al. Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations
Huang et al. Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
Li et al. Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study
Sun et al. Suppression of the Charge Density Wave State in Two‐Dimensional 1T‐TiSe2 by Atmospheric Oxidation
Bai et al. Mechanism of linear and nonlinear optical effects of chalcopyrite AgGaX2 (X= S, Se, and Te) crystals
Ueda et al. Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties
Mendelsberg et al. Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory
Ouni et al. Investigation of electrical and dielectric properties of antimony oxide (Sb2O4) semiconductor thin films for TCO and optoelectronic applications
Santos-Cottin et al. Rashba coupling amplification by a staggered crystal field
Gabrelian et al. Quaternary Cu2HgGeSe4 selenide: Its electronic and optical properties as elucidated from TB-mBJ band-structure calculations and XPS and XES measurements
Vu et al. First-principles DFT computation and X-ray spectroscopy study of the electronic band structure and optical constants of Cu2HgGeS4
Lahiji et al. First–principle calculation of the elastic, band structure, electronic states, and optical properties of Cu–doped ZnS nanolayers
Tsujimoto et al. Terahertz emission from a stack of intrinsic Josephson junctions in Pb-doped Bi2Sr2CaCu2O8+ δ
Li et al. First principle study of electronic structure and optical properties of Mo doped ZnO with different concentrations
Lavrentyev et al. Electronic structure and optical properties of Cu2CdGeS4: DFT calculations and X-ray spectroscopy measurements
Vu et al. Electronic band structure and optical properties of Li2In2GeSe6 crystal
Vu et al. Quaternary Tl2CdGeSe4 selenide: electronic structure and optical properties of a novel semiconductor for potential application in optoelectronics
Ghasemi et al. Electronic and optical properties of monolayer and bulk of PtSe 2
Rehman et al. Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates
Kato et al. Optical anomalous Hall effect enhanced by flat bands in ferromagnetic van der Waals semimetal
Azam et al. Modified Becke–Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4
Long et al. Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3