Yadav et al., 2020 - Google Patents
A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technologyYadav et al., 2020
- Document ID
- 16188977200647852234
- Author
- Yadav P
- Kumar P
- Verma A
- Ambulker S
- Misra P
- Publication year
- Publication venue
- 2020 IEEE International Symposium on Smart Electronic Systems (iSES)(Formerly iNiS)
External Links
Snippet
In this work the low-IF receiver for 60 GHz wireless system is presented using 40nm CMOS technology. The individual blocks of receiver front-end includes 3-stage low noise amplifier (LNA), mixer, low pass filter (LPF). These blocks are optimized for low power while …
- 238000005516 engineering process 0 title abstract description 17
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45197—Pl types
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
- H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7529529B2 (en) | Low noise, high-linearity RF front end receiver | |
Liang et al. | A new linearization technique for CMOS RF mixer using third-order transconductance cancellation | |
Han et al. | I/Q balance-enhanced wideband receiver front-end for 2G/3G/4G/5G NR cellular applications | |
van de Beek et al. | A 0.6-to-10GHz receiver front-end in 45nm CMOS | |
Khatri et al. | A SAW-less CDMA receiver front-end with single-ended LNA and single-balanced mixer with 25% duty-cycle LO in 65nm CMOS | |
Kim et al. | A 5.25-GHz image rejection RF front-end receiver with polyphase filters | |
Liu et al. | A 2.4 GHz receiver with a current-reused inductor-less noise-canceling balun LNA in 40 nm CMOS | |
Yadav et al. | A 60 GHz, 50 mW, 3dB Noise Figure Receiver Frontend Using UMC 40 nm CMOS technology | |
Wang et al. | A low voltage low power highly linear CMOS quadrature mixer using transconductance cancellation technique | |
Yeh et al. | A 16 nm FinFET 0.4 V inductor-less cellular receiver front-end with 10 mW ultra-low power and 0.31 mm 2 ultra-small area for 5G system in sub-6 GHz band | |
Rodriguez et al. | WiMAX/LTE receiver front-end in 90nm CMOS | |
Tang et al. | A low-noise amplifier using subthreshold operation for GPS-L1 RF receiver | |
Weng et al. | A 1V 2.4 GHz down conversion folded mixer | |
Chen et al. | A 60 GHz CMOS receiver front-end with integrated 180 out-of-phase wilkinson power divider | |
Shen et al. | A 0.07–3 GHz wideband front-end for SDR receiver with 2.3 dB NF and 12 dBm IIP3 in 65 nm CMOS | |
Bao et al. | A 20 GHz sub-1V low noise amplifier and a resistive mixer in 90 nm CMOS technology | |
Nouri et al. | A double-balanced CMOS mixer with on-chip balun for 60-GHz receivers | |
Bhatia et al. | A 52dB Spurious-Free Dynamic Range Ku-Band LNA-Mixer in a 130nm SiGe BiCMOS Process | |
Lin et al. | Implementation of a low-power folded-cascode RF front-end for LTE receivers | |
Abdelghany et al. | A low flicker noise direct conversion receiver for the IEEE 802.11 a wireless LAN standard | |
Yadav et al. | A double-resistive feedback active inductor based receiver frontend in 40 nm cmos process for 28-GHz applications | |
Kim et al. | A 120 GHz wireless radio link for high-speed chip-to-chip communication | |
Jo et al. | IIP2-Calibration-Free 5G NR Cellular Receiver Front-End With Mixer-Sharing Global $ N $-Path Notch Filter Feedback Achieving $+ $72 dBm IIP2 | |
Liu et al. | A 0.18 um CMOS reconfigurable multi-band multi-gain low noise amplifier | |
Khatri et al. | FULLY OPTIMIZED ULTRA WIDEBAND RF RECEIVE RFRONT END |