Hu et al., 1992 - Google Patents
Electrical and optical properties of indium doped zinc oxide films prepared by atmospheric pressure chemical vapor depositionHu et al., 1992
- Document ID
- 16157331714788775734
- Author
- Hu J
- Gordon R
- Publication year
- Publication venue
- MRS Online Proceedings Library (OPL)
External Links
Snippet
Indium doped zinc oxide films have been deposited from diethyl zinc, ethanol and trimethyl indium in the temperature range between 225° C and 450° C in a laminar flow atmospheric chemical vapor deposition reactor. Both doped and undoped films were crystalline. The …
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide 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[Zn]=O 0 title abstract description 70
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