Levinson et al., 1990 - Google Patents
Oxide nonlinear conductors: a reviewLevinson et al., 1990
- Document ID
- 1615426853610543185
- Author
- Levinson L
- Philipp H
- Publication year
- Publication venue
- MRS Online Proceedings Library (OPL)
External Links
Snippet
Oxide nonlinear conductors are granular electronic ceramic materials whose electrical behavior is dominated by grain boundary interfaces states. The material is typically comprised of relatively conducting oxide grains with electrical barriers at the grain …
- 239000004020 conductor 0 title abstract description 13
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Levinson et al. | ZnO varistors for transient protection | |
Eda | Zinc oxide varistors | |
Bai et al. | Influence of sintering temperature on electrical properties of ZnO varistors | |
Nahm | The electrical properties and dc degradation characteristics of Dy2O3 doped Pr6O11-based ZnO varistors | |
Cao et al. | Effect of Pr6O11 doping on the microstructure and electrical properties of ZnO varistors | |
Nahm | Electrical properties and stability of praseodymium oxide-based ZnO varistor ceramics doped with Er2O3 | |
Carlson et al. | A procedure for estimating the lifetime of gapless metal oxide surge arresters for AC application | |
Philipp et al. | ZnO varistors for protection against nuclear electromagnetic pulses | |
Modine et al. | New varistor material | |
Rohini et al. | Enhancement of electro-thermal characteristics of micro/nano ZnO based surge arrester | |
Nahm | Nonlinear behavior of Tb4O7-modified ZnO-Pr6O11-based ceramics with high breakdown field | |
Nahm et al. | Effect of sintering temperature on electrical properties and stability of Pr 6 O 11-based ZnO varistors | |
Nahm | The effect of sintering temperature on electrical properties and accelerated aging behavior of PCCL-doped ZnO varistors | |
Levinson et al. | Oxide nonlinear conductors: a review | |
Jiang et al. | Effect of Zn doping on stability of ZnO varistors under high pulse-current stress | |
KR102137485B1 (en) | Vanadia-based zinc oxide varistors doped with yttria and maunfacturing method for the same | |
Ganesh | A Review of zinc oxide varistors for surge arrester | |
Gupta | Effect of minor doping on the high current application of the ZnO varistor | |
Nahm | Effect of La 2 O 3 addition on microstructure and electrical properties of ZnO-Pr 6 O 11-based varistor ceramics | |
CA1183965A (en) | Varistors with controllable voltage versus time response | |
Nahm et al. | Effect of sintering time on electrical characteristics and DC accelerated aging behaviors of Zn-Pr-Co-Cr-Dy oxide-based varistors | |
Choi et al. | Surge energy capability of ZnO-based varistors according to the Sb2O3 and Bi2O3 | |
Levinson | ZnO varistor technology | |
Nahm | Aging characteristics of ZnO–PrO1. 83-based semiconducting varistors for surge protection reliability | |
Delaney et al. | Polycrystalline Zinc Oxide Dielectrics |