Riley et al., 2018 - Google Patents
Crossover from lattice to plasmonic polarons of a spin-polarised electron gas in ferromagnetic EuORiley et al., 2018
View HTML- Document ID
- 16010216278336220117
- Author
- Riley J
- Caruso F
- Verdi C
- Duffy L
- Watson M
- Bawden L
- Volckaert K
- Van Der Laan G
- Hesjedal T
- Hoesch M
- Giustino F
- King P
- Publication year
- Publication venue
- Nature Communications
External Links
Snippet
Strong many-body interactions in solids yield a host of fascinating and potentially useful physical properties. Here, from angle-resolved photoemission experiments and ab initio many-body calculations, we demonstrate how a strong coupling of conduction electrons with …
- 229910016697 EuO 0 title abstract description 47
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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