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Hackbarth et al., 2003 - Google Patents

Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

Hackbarth et al., 2003

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Document ID
16055242754836348896
Author
Hackbarth T
Herzog H
Hieber K
König U
Bollani M
Chrastina D
von Känel H
Publication year
Publication venue
Applied physics letters

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This letter reports on the electrical performance of strained Si-based n-type heterostructure field-effect transistors prepared on 500 nm Si0. 56Ge0. 44 virtual substrates. The method of low-energy plasma-enhanced chemical vapor deposition at low temperature was used for …
Continue reading at www.researchgate.net (PDF) (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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    • H01L29/2003—Nitride compounds
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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