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Agarwal et al., 2016 - Google Patents

Fabrication and characterization of Pd/cu doped ZnO/Si and Ni/cu doped ZnO/Si Schottky diodes

Agarwal et al., 2016

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Document ID
15997130055578851838
Author
Agarwal L
Singh B
Tripathi S
Chakrabarti P
Publication year
Publication venue
Thin Solid Films

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In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force …
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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