Peiner et al., 1995 - Google Patents
Doping profile analysis in Si by electrochemical capacitance‐voltage measurementsPeiner et al., 1995
- Document ID
- 15980896635184333174
- Author
- Peiner E
- Schlachetzki A
- Krüger D
- Publication year
- Publication venue
- Journal of the Electrochemical Society
External Links
Snippet
The electrochemical capacitance-voltage (ECV) technique was used to measure the carrier concentration profiles in St. Using the conventional parallel-equivalent circuit model of the Schottky junction to describe the electrolyte-silicon barrier we found excellent agreement …
- 238000005259 measurement 0 title abstract description 11
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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