[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Sakata et al., 1991 - Google Patents

Chemically amplified bilevel resist based on condensation of siloxanes

Sakata et al., 1991

Document ID
15952081341595980186
Author
Sakata M
Ito T
Yamashita Y
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

This paper deals with a negative bilevel resist which is based on the acid-catalyzed condensation reaction of poly (siloxane) s. The resist systems consist of photoacid generators and poly (siloxane). Ph 3 S+ OTf-reveals an efficient activity for silanol …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/165Monolayers, e.g. Langmuir-Blodgett

Similar Documents

Publication Publication Date Title
EP0315954B1 (en) Pattern-forming material and pattern formation method
EP0163538B1 (en) Pattern-forming material and its production and use
US6890448B2 (en) Antireflective hard mask compositions
KR100212933B1 (en) Positive resist composition
US5457003A (en) Negative working resist material, method for the production of the same and process of forming resist patterns using the same
KR101847382B1 (en) Silicon-containing resist underlayer-forming composition containing amic acid
JP7315900B2 (en) Photocurable silicon-containing coating film-forming composition
KR20170033265A (en) Silicon-containing resist underlayer film forming composition having halogenated sulfonylalkyl group
KR20140089350A (en) Composition for forming silicon-containing euv resist underlayer film
KR20180118636A (en) Method of planarizing a semiconductor substrate using a silicon-containing composition
JPH04366958A (en) Radiation sensitive resin composition
EP2370537A1 (en) Switchable antireflective coatings
TWI818900B (en) Coating composition for reversal pattern
EP0466025B1 (en) Resist material, method for the production of the same and process of forming resist patterns using the same
Gozdz Progress in the chemistry of organosilicon resists
US5079131A (en) Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
Sakata et al. Chemically amplified bilevel resist based on condensation of siloxanes
EP0447111A1 (en) Resist composition and pattern formation process
Sun Photo-imageable hardmask with dual tones for microphotolithography
EP0274757A2 (en) Bilayer lithographic process
WO1999052018A1 (en) Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US4693960A (en) Photolithographic etching process using organosilicon polymer composition
KR20180116287A (en) Silicone-Containing Pattern Semi-dedicated Clone
Sakata et al. A NOVEL ELECTRON BEAM RESIST SYSTEM ACID CATALIZED CONYERSION OF POLY (DI-t-BUTOXYSILOXANE) INTO GLASS
Saigo et al. A negative photoresist (TAS) for a bi‐layer resist system