[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Fukami et al., 2017 - Google Patents

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Fukami et al., 2017

View PDF
Document ID
15881106633119800534
Author
Fukami S
Ohno H
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays …
Continue reading at scholar.archive.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/02—Details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08—Magnetic-field-controlled resistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer

Similar Documents

Publication Publication Date Title
Fukami et al. Magnetization switching schemes for nanoscale three-terminal spintronics devices
Qin et al. Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction
Yang et al. Ionic liquid gating control of RKKY interaction in FeCoB/Ru/FeCoB and (Pt/Co) 2/Ru/(Co/Pt) 2 multilayers
CN105280214B (en) Current drive-type MAGNETIC RANDOM ACCESS MEMORY and spin logical device
Wang et al. Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
Wang et al. Low-power non-volatile spintronic memory: STT-RAM and beyond
US9343658B2 (en) Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
Pushp et al. Giant thermal spin-torque–assisted magnetic tunnel junction switching
Kang et al. Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions
Wu et al. Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet
Arpaci et al. Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
Kumar et al. Ultralow energy domain wall device for spin-based neuromorphic computing
Shao et al. Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Singh et al. High spin to charge conversion efficiency in electron beam-evaporated topological insulator Bi2Se3
Mishra et al. Emerging spintronics phenomena and applications
Yamaguchi et al. Temperature estimation in a ferromagnetic Fe–Ni nanowire involving a current-driven domain wall motion
Elahi et al. A brief review on the spin valve magnetic tunnel junction composed of 2D materials
Cui et al. Low‐Power and Field‐Free Perpendicular Magnetic Memory Driven by Topological Insulators
Zhang et al. Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform
Xu et al. Orbital-flop induced magnetoresistance anisotropy in rare earth monopnictide CeSb
Zeng et al. Field-free SOT-switching based on a vertical composition gradient of ferrimagnetic alloys
Liu et al. Magnetic proximity, magnetoresistance and spin filtering effect in a binuclear ferric phthalocyanine from first principles
Bhattacharya et al. Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy
Blachowicz et al. Spintronics: Theory, Modelling, Devices
Saito et al. Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system