[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Keskenler et al., 2012 - Google Patents

Effects of fluorine incorporation on the microstructure and optical properties of ZnO thin films synthesized by sol-gel technique

Keskenler et al., 2012

View PDF
Document ID
15857192691654075319
Author
Keskenler E
Turgut G
Aydin S
Dogan S
Publication year
Publication venue
Sci. Res. Essays

External Links

Snippet

Fluorine doped Zinc oxide (ZnO)[FZO] transparent conducting thin films were deposited by sol-gel spin coating method. Zinc acetate and amonium fluoride were used as precursor solution materials. Microstructural, morphologycal, and optical properties of the films were …
Continue reading at academicjournals.org (PDF) (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

Similar Documents

Publication Publication Date Title
Sabeeh et al. The effect of annealing temperature and Al dopant on characterization of ZnO thin films prepared by sol-gel method
Al-Ghamdi et al. Semiconducting properties of Al doped ZnO thin films
Aydin et al. Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach
Keskenler et al. Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium
Sakthivel et al. Different rare earth (Sm, La, Nd) doped magnetron sputtered CdO thin films for optoelectronic applications
Malevu et al. Effect of annealing temperature on structural, morphology and optical properties of ZnO nano-needles prepared by zinc-air cell system method
Ayadi et al. Effect of the annealing temperature on transparency and conductivity of ZnO: Al thin films
Hadri et al. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature
Ilican et al. CdO: Al films deposited by sol–gel process: a study on their structural and optical properties
Wang et al. Effect of F and Nb co-doping on structural, electrical and optical properties of spray deposited tin oxide thin films
Bhuvaneswari et al. Effect of fluorine doping on the structural, optical and electrical properties of spray deposited cadmium stannate thin films
Kavitha et al. Luminescent Ta doped WO3 thin films as a probable candidate for excitonic solar cell applications
Abood et al. A Comparison Study the Effect of Doping by Ga2O3 and CeO2 On the Structural and Optical Properties of SnO2 Thin Films
Turgut et al. Characteristic evaluation on spray-deposited WFTO thin films as a function of W doping ratio
Daranfed et al. Effect of the deposition times on the properties of ZnO thin films deposited by ultrasonic spray pyrolysis for optoelectronic applications
Keskenler et al. Effects of fluorine incorporation on the microstructure and optical properties of ZnO thin films synthesized by sol-gel technique
Nirmala et al. Structural and optical properties of an undoped and Mn doped ZnO nanocrysatlline thin film
Kwok et al. Highly transparent and conducting In doped CdO synthesized by sol-gel solution processing
Maldonado et al. Physical properties of indium and fluorine codoped zinc oxide thin films deposited by chemical spray
Faizullah et al. Pyrolized growth of (Al, N) dual doped CdO thin films and study of structural, surface morphology and optoelectrical properties
Okereke et al. Structure and optical properties of chemically deposited tin selenide
Kaushik et al. Growth and characterization of ZnO and MgxZn1− xO thin films by aerosol assisted chemical vapor deposition technique
Mohite et al. Al-doped zinc oxide nanostructures as transparent conductive window layer for photovoltaic applications
Khan et al. EFFECT OF THE DISTANCE BETWEEN CATHODE AND SUBSTRATE ON STRUCTURAL AND OPTICAL PROPERTIES OF ZINC OXIDE THIN FILMS DEPOSITED BY RF SPUTTERING TECHNIQUE.
Atılgan et al. Boron-Doped Thin Films Fabricated by the Spin Coating Method: The Effect of Doping Concentrations