[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Nanishi et al., 2022 - Google Patents

Plasma-excited MBE—Proposal and achievements through R&D of compound semiconductor materials and devices

Nanishi et al., 2022

Document ID
15850966392026544230
Author
Nanishi Y
Yamaguchi T
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

This paper reviews the 35 years of history of plasma-excited MBE, focusing on the special value added to conventional MBE through the usage of plasma-excited molecular beams. These advantages include low-temperature surface cleaning, low-temperature growth …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
    • C30B23/02—Epitaxial-layer growth

Similar Documents

Publication Publication Date Title
Kucharski et al. Growth of bulk GaN crystals
Baldini et al. Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
Zhang et al. Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices
Kour et al. Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
Ren et al. Wide energy bandgap electronic devices
Amano Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN
Xu et al. Progress in bulk GaN growth
Baldini et al. Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy
EP2842154B1 (en) Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on substrates with diamond crystal structure and iii-nitride semiconductors
US7514726B2 (en) Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy
Wei et al. β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
Davis et al. Gallium nitride materials-progress, status, and potential roadblocks
CN1894771B (en) Non-polarity (Al, B, Inc, Ga) N Quantum pit
Mochalov et al. Heteroepitaxial Growth of Ga2O3 Thin Films of Various Phase Composition by Oxidation of Ga in Hydrogen-Oxygen Plasmas
Zambrano-Serrano et al. Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si (111) heterostructures
Araki et al. Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy
Hernaīndez-Calderoīn Epitaxial Growth of Thin Films and Quantum Structures of IIeVI Visible-Bandgap Semiconductors
Nanishi et al. Plasma-excited MBE—Proposal and achievements through R&D of compound semiconductor materials and devices
KR20110021961A (en) Hexagonal wurtzite single crystal
Zeghouane et al. Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates
Lee et al. Growth of semi-insulating GaN layer by controlling size of nucleation sites for SAW device applications
Hullavarad et al. Homo-and hetero-epitaxial growth of hexagonal and cubic MgxZn1− x O alloy thin films by pulsed laser deposition technique
CN108511326A (en) A kind of compound semiconductor materials InGaN and its epitaxial preparation method
Miyamoto et al. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates
JP6934473B2 (en) Group III nitride semiconductor light emitting device