Grabtchikov et al., 2001 - Google Patents
Passively Q-switched 1.35 μm diode pumped Nd: KGW laser with V: YAG saturable absorberGrabtchikov et al., 2001
- Document ID
- 15784655274523100455
- Author
- Grabtchikov A
- Kuzmin A
- Lisinetskii V
- Orlovich V
- Demidovich A
- Yumashev K
- Kuleshov N
- Eichler H
- Danailov M
- Publication year
- Publication venue
- Optical Materials
External Links
Snippet
Passively Q-switched 1.35 μm diode pumped laser operation in neodymium-doped potassium gadolinium tungstate–KGd (WO4) 2: Nd3+–has been obtained using a vanadium- doped yttrium aluminium garnet (V: YAG) bulk crystal as a saturable absorber. Slope …
- 239000006096 absorbing agent 0 title abstract description 11
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
- H01S3/109—Frequency multiplying, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094038—End pumping
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal mode control, e.g. specifically multimode
- H01S3/08031—Single-mode emission
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising more than two reflectors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Pulse generation, e.g. Q-switching, mode locking
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using a saturable absorber
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/02—Constructional details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Grabtchikov et al. | Passively Q-switched 1.35 μm diode pumped Nd: KGW laser with V: YAG saturable absorber | |
US6834064B1 (en) | Mode-locked thin-disk laser | |
US5315608A (en) | Holmium-doped solid state optically pumped laser | |
US6185236B1 (en) | Self frequency double nd-doped: YCOB LASER | |
Garcıa-López et al. | High repetition rate Q-switching of high power Nd: YVO4 slab laser | |
EP1236249B1 (en) | Mode-locked thin-disk laser | |
JP2015507348A (en) | Tunable VECSEL Raman laser | |
EP1618634B1 (en) | Eye-safe solid-state laser system | |
Grabtchikov et al. | Stimulated Raman scattering in Nd: KGW laser with diode pumping | |
Parali et al. | Diode-pumped Alexandrite laser with passive SESAM Q-switching and wavelength tunability | |
de Almeida Vieira et al. | Nd: YLF laser at 1053 nm diode side pumped at 863 nm with a near quantum-defect slope efficiency | |
Chen et al. | Diode-pumped passively Q-switched Nd: YAG laser at 1123 nm | |
Graf et al. | Multi-watt Nd: YVO4 laser, mode locked by a semiconductor saturable absorber mirror and side-pumped by a diode-laser bar | |
Liu et al. | Single-frequency Q-switched Cr, Nd: YAG laser operating at 946-nm wavelength | |
Lei et al. | Experimental and Theoretical Study of Dual-Wavelength Continuous-wave Laser in Yb: YAG at 1030 and 1048 nm | |
Omatsu et al. | Efficient 1181 nm self-stimulating Raman output from transversely diode-pumped Nd3+: KGd (WO4) 2 laser | |
Ng et al. | Quasi-cw diode-pumped Nd: GdVO4 laser passively Q-switched and mode-locked by Cr4+: YAG saturable absorber | |
Gloster et al. | Diode-pumped Q-switched Yb: S-FAP laser | |
US9042413B1 (en) | Q-switched millimeter-wave SMASER | |
Chen et al. | Comparison between a-cut and off-axially cut Nd: YVO4 lasers passively Q-switched with a Cr4+: YAG crystal | |
Beyatli | Low-cost multi-mode diode pumped Tm: YLF laser: Multi-color & Q-switching operations | |
Jiang et al. | Dual-wavelength eye-safe Nd: GYSGG/YVO4 intracavity Raman laser under in-band pumping | |
Demirbas et al. | Cavity-dumped nanosecond Cr: LiSAF laser in the 985–1030 nm region for versatile seeding of Yb-based amplifiers | |
Robertson et al. | Diode-pumped broadly tunable (809–910 nm) femtosecond Cr: LiSAF laser | |
Terekhov et al. | Cr-ZnSe Passively Q-switched fiber-bulk Ho: YAG hybrid laser |