[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Tan et al., 2014 - Google Patents

Ordered structure and high thermoelectric properties of Bi2 (Te, Se) 3 nanowire array

Tan et al., 2014

View PDF
Document ID
15748915341325826623
Author
Tan M
Deng Y
Wang Y
Publication year
Publication venue
Nano Energy

External Links

Snippet

In this paper, novel Bi 2 (Te, Se) 3 nanowire array structure can favorably influence the carrier and phonon transport properties. The ternary compound n-type Bi 2 (Te, Se) 3 film, composed of ordered nanowire array, has been successfully fabricated by a simple thermal …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Tan et al. Ordered structure and high thermoelectric properties of Bi2 (Te, Se) 3 nanowire array
Ma et al. Review of experimental approaches for improving zT of thermoelectric materials
Kurokawa et al. Influences of substrate types and heat treatment conditions on structural and thermoelectric properties of nanocrystalline Bi2Te3 thin films formed by DC magnetron sputtering
Suen et al. Enhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle deposition
Andrews et al. Atomic-level control of the thermoelectric properties in polytypoid nanowires
Adam et al. Ultra thin bismuth selenide-bismuth telluride layers for thermoelectric applications
US20140230868A1 (en) Graphene-containing composite laminate, thermoelectric material, and thermoelectric device including the thermoelectric material
Fang et al. Thermoelectric properties of solution-synthesized n-type Bi 2 Te 3 nanocomposites modulated by Se: An experimental and theoretical study
Fan et al. High-performance bismuth telluride thermoelectric thin films fabricated by using the two-step single-source thermal evaporation
Shu et al. Modification of bulk heterojunction and Cl doping for high-performance thermoelectric SnSe2/SnSe nanocomposites
Deng et al. Preferential growth of Bi 2 Te 3 films with a nanolayer structure: enhancement of thermoelectric properties induced by nanocrystal boundaries
Tan et al. Oriented growth of A2Te3 (A= Sb, Bi) films and their devices with enhanced thermoelectric performance
Yang et al. A facile surfactant-assisted reflux method for the synthesis of single-crystalline Sb2Te3 nanostructures with enhanced thermoelectric performance
Wu et al. Nanoporous (00l)-oriented Bi2Te3 nanoplate film for improved thermoelectric performance
Gautam et al. Structural, electronic and thermoelectric properties of Bi2Se3 thin films deposited by RF magnetron sputtering
US7560053B2 (en) Thermoelectric material having a rhombohedral crystal structure
Hou et al. Surprisingly high in-plane thermoelectric performance in a-axis-oriented epitaxial SnSe thin films
Tan et al. High thermoelectric properties of (Sb, Bi) 2Te3 nanowire arrays by tilt-structure engineering
Adam et al. Optimized thermoelectric performance in thin (Bi2Se3) 1− x (Bi2Te3) x alloyed films
Tan et al. Enhancement of thermoelectric properties induced by oriented nanolayer in Bi2Te2. 7Se0. 3 columnar films
Xu et al. Enhanced thermoelectric performance of SnTe thin film through designing oriented nanopillar structure
Pang et al. Revealing an elusive metastable wurtzite CuFeS2 and the phase switching between wurtzite and chalcopyrite for thermoelectric thin films
Ashfaq et al. High thermoelectric power factor of Sr doped Bi2Te3 thin film through energy filtering effect
Tan et al. Unique hierarchical structure and high thermoelectric properties of antimony telluride pillar arrays
Sun et al. Synthesis and characterization of nanostructured bismuth selenide thin films