Putaux et al., 1981 - Google Patents
Target ion source systems at the Orsay isocele 2 separatorPutaux et al., 1981
- Document ID
- 15744015245366122100
- Author
- Putaux J
- Obert J
- Kotfila L
- Roussiere B
- Sauvage-Letessier J
- Liang C
- Peghaire A
- Paris P
- Isocele Collaboration
- et al.
- Publication year
- Publication venue
- Nuclear Instruments and Methods in Physics Research
External Links
Snippet
We present a general survey of the various target experiments performed with the new ISOCELE 2 separator, on-line with the improved Orsay synchrocyclotron (present intensities: up to 2 μ A-200 MeV p, 1 μ A-283 MeV 3 He). We use a versatile plasma ion-source of the …
- 150000002500 ions 0 title description 12
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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