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Voitsekhovskii et al., 2014 - Google Patents

Admittance in MIS Structures Based on Graded-GAP MBE p-Hg 1–х Cd х Te (x= 0.22–0.23) in the Strong Inversion Mode

Voitsekhovskii et al., 2014

Document ID
15615729492338556884
Author
Voitsekhovskii A
Nesmelov S
Dzyadukh S
Publication year
Publication venue
Russian Physics Journal

External Links

Snippet

Admittance of MIS structures based on the graded-gap MBE (molecular beam epitaxy) p-Hg 1–х Cd х Te (x= 0.22–0.23) is studied in the strong inversion mode at temperatures of 8–140 K. Using the measurements of admittance, the values of main elements of the equivalent …
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