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Bengtsson et al., 1992 - Google Patents

The bonded unipolar silicon‐silicon junction

Bengtsson et al., 1992

Document ID
15681719872925414573
Author
Bengtsson S
Andersson G
Andersson M
Engström O
Publication year
Publication venue
Journal of applied physics

External Links

Snippet

The electrical and optical properties of wafer bonded unipolar silicon‐silicon junctions were investigated. The interfaces, both n‐n type and p‐p type, were prepared using wafers with hydrophilic surfaces. The current versus voltage characteristics, the current transients …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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