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Braga et al., 2009 - Google Patents

High‐performance organic field‐effect transistors

Braga et al., 2009

Document ID
1555379327788336664
Author
Braga D
Horowitz G
Publication year
Publication venue
Advanced materials

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Snippet

With the advent of devices based on single crystals, the performance of organic field‐effect transistors has experienced a significant leap, with mobility now in excess of 10 cm2 V− 1 s− 1. The purpose of this review is to give an overview of the state‐of‐the‐art of these high …
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    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
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    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0516Field-effect devices, e.g. TFTs insulated gate field effect transistors characterised by the gate dielectric
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