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Pankove et al., 1979 - Google Patents

Photoluminescence from hydrogenated ion‐implanted crystalline silicon

Pankove et al., 1979

Document ID
15542827482009232665
Author
Pankove J
Wu C
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Ion-implanted crystalline silicon annealed in atomic hydrogen photoluminesces at 0.99+ 0.01 eV in a band having a spectral width of 0.1 eV FWHM. The emitted spectrum does not depend on the chemical nature of the implanted ion (AI, As, D, F, H, Ne, P, Si); however …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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