Hofmann, 1986 - Google Patents
Practical surface analysis: state of the art and recent developments in AES, XPS, ISS and SIMSHofmann, 1986
- Document ID
- 15453531283663428142
- Author
- Hofmann S
- Publication year
- Publication venue
- Surface and interface analysis
External Links
Snippet
This review considers the well established and most frequently applied surface analysis techniques: AES, XPS, ISS and SIMS in a comparative manner, confronting fundamental principles and present instrumental performance with the requests of the scientist. The …
- 238000005211 surface analysis 0 title abstract description 42
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam
- G01N23/2252—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam and measuring excited X-rays
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometer or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hofmann | Practical surface analysis: state of the art and recent developments in AES, XPS, ISS and SIMS | |
Seah | A review of the analysis of surfaces and thin films by AES and XPS | |
Reniers et al. | New improvements in energy and spatial (x, y, z) resolution in AES and XPS applications | |
Werner | The use of secondary ion mass spectrometry in surface analysis | |
Kirby et al. | Secondary electron emission yields from PEP-II accelerator materials | |
US5087815A (en) | High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis | |
Angeli et al. | Glow discharge optical emission spectrometry: moving towards reliable thin film analysis–a short review | |
Hantsche | Comparison of basic principles of the surface‐specific analytical methods: AES/SAM, ESCA (XPS), SIMS, and ISS with X‐ray microanalysis, and some applications in research and industry | |
MX2011009486A (en) | Combined method of secondary ion mass spectroscopy and energy dispersive x-ray for quantitative chemical analysis of various solid materials and thin films. | |
Baker | Secondary ion mass spectrometry | |
Figueiredo et al. | Influence of ion induced secondary electron emission on the stability of ionisation vacuum gauges | |
Hu et al. | Absolute cross sections for beam‐surface reactions: N2+ on Ti from 0.25 to 3.0 keV kinetic energy | |
Scheuerlein et al. | Electron stimulated carbon adsorption in ultrahigh vacuum monitored by Auger electron spectroscopy | |
Evans Jr | Ion probe mass spectrometry: Overview | |
Kibel | X-ray photoelectron spectroscopy | |
Brongersma et al. | A round robin experiment of elemental sensitivity factors in low-energy ion scattering | |
Hofmann | Auger electron spectroscopy | |
Gunawardane et al. | Auger electron spectroscopy | |
Turner | X-ray photoelectron and Auger electron spectroscopy | |
Fraser et al. | An X‐Ray Photoelectron Spectrometer Designed for Surface Research | |
Hofmann | High resolution Auger electron spectroscopy for materials characterization | |
Scheuerlein | The activation of non-evaporable getters monitored by AES, XPS, SSIMS and secondary electron yield measurements | |
Jorzick et al. | Detection in the ppm range and high-resolution depth profiling with the new SNMS instrument INA-X | |
Hubin et al. | X-ray photoelectron and Auger electron spectroscopy | |
Pimpec et al. | Secondary electron yield measurements of TiN coating and TiZrV getter film |