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Pan et al., 2011 - Google Patents

Al/Al2O3/Sm2O3/SiO2/Si structure memory for nonvolatile memory application

Pan et al., 2011

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Document ID
15256318036036822304
Author
Pan T
Chen F
Publication year
Publication venue
Semiconductor science and technology

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Snippet

In this paper, we propose an Al/Al 2 O 3/Sm 2 O 3/SiO 2/Si structure memory using a high-k Sm 2 O 3 film and Al 2 O 3 film as a charge-trapping layer and blocking layer for nonvolatile memory application, respectively. The Al/Al 2 O 3/Sm 2 O 3/SiO 2/Si structure memories …
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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