[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Guha, 2018 - Google Patents

Silver Nanostructures on Oxide Surfaces: Growth, Characterizations and Applications

Guha, 2018

View PDF
Document ID
15130786465924021624
Author
Guha P
Publication year

External Links

Snippet

2.2. 2 Chemical vapor deposition (CVD) technique 2.2. 2.1 Vapor-solid (VS) growth mechanism 2.2. 3 Ion beams for synthesis and modification 2.2. 3.1 Energy losses: nuclear and electronic 2.3 Characterization techniques 2.3. 1 Transmission electron microscopy …
Continue reading at estudogeral.uc.pt (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam
    • G01N23/2252—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam and measuring excited X-rays
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H01J2237/223—Fourier techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation

Similar Documents

Publication Publication Date Title
Song et al. Atomic‐resolution imaging of halide perovskites using electron microscopy
Baer et al. Characterization of thin films and coatings
Luo A practical guide to transmission electron microscopy: Fundamentals
Fleck et al. Characterization techniques in energy generation and storage
Krumeich Introduction into transmission and scanning transmission electron microscopy
Wang et al. Electron microscopy techniques for imaging and analysis of nanoparticles
Guha Silver Nanostructures on Oxide Surfaces: Growth, Characterizations and Applications
Giusti Deposition and characterisation of functional ITO thin films
Sharma In-Situ Transmission Electron Microscopy Experiments: Design and Practice
Canlı Thickness analysis of thin films by energy dispersive x-ray spectroscopy
Brown Structural Characterization
Xia Atomic and electronic structure of random and ordered 2D alloys
Sapkota Nanoscale Electron Microscopy Study of Phase Transitions and Thermal Properties in Functional Materials
Benher Electronic and Chemical Surface Properties of Bi2Se3 Derived Compounds
Auge Modification of monolayer-thick semiconductors by ultra-low energy ion implantation
de Graaf Atomic resolution imaging of light elements in low-dimensional materials
King Spectroscopy and microscopy of transition metal chalcogenide nanomaterials
Jain et al. Microstructural characteristics and optical performance of nano-structured thin films of tin oxide
Sun Application of a modern scanning electron microscope for materials characterization
Cheng Growth and Physical Properties of Chalcogenide Thin Films and Heterostructures
Webster Precise nanoscale characterisation of novel Heusler thermoelectrics via analytical electron microscopy
Nazzari Growth of 2D silicon structures by molecular beam epitaxy
Rothmann et al. Electron Microscopy of Perovskite Solar Cell Materials
Levin Transmission Electron Microscopy of Vacuum Sensitive, Radiation Sensitive, and Structurally Delicate Materials
Appelfeller Atomic structure and electronic properties of Tb silicide nanowires