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Moon et al., 2004 - Google Patents

Nano metal particles for low temperature interconnect technology

Moon et al., 2004

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Document ID
15191061319287514115
Author
Moon K
Dong H
Pothukuchi S
Li Y
Wong C
Publication year
Publication venue
2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No. 04CH37546)

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Snippet

For low temperature interconnects, melting point (T/sub m/) depression and sintering behavior of metal nano particles are investigated. Nano Ag particles used (/spl sim/20 nm) exhibited obvious sintering behavior, rather than typical melting behavior, at significantly …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices

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