Tominaga et al., 2024 - Google Patents
Application of Visible ThermoDynamic Imaging Technology for Hotspot Detection in Failure AnalysisTominaga et al., 2024
- Document ID
- 15173090646890692423
- Author
- Tominaga S
- Chinone N
- Uchikado A
- Aoshima Y
- Nakamura T
- Matsumoto T
- Jung Y
- Lee S
- Han S
- Kim H
- Ikesu M
- Publication year
- Publication venue
- International Symposium for Testing and Failure Analysis
External Links
Snippet
Thermal imaging capability is one of the key technique due to emerging three dimensional (3D) devices. Thermo-reflectance is promising candidate for high speed and high sensitive thermal imaging especially for 3D structured and metal-covered devices. A system which …
- 238000003384 imaging method 0 title abstract description 56
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/04—Casings Mountings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/043—Prevention or determination of dust, smog or clogging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/0003—Radiation pyrometry for sensing the radiant heat transfer of samples, e.g. emittance meter
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6078183A (en) | Thermally-induced voltage alteration for integrated circuit analysis | |
KR101009455B1 (en) | Fault analysis method and fault analysis device | |
KR100734186B1 (en) | Apparatus and method for dynamic diagnostic testing of integrated circuits | |
US5422498A (en) | Apparatus for diagnosing interconnections of semiconductor integrated circuits | |
WO2016129305A1 (en) | Inspection device and inspection method | |
JP4846902B2 (en) | Method and apparatus for directly measuring voltage in an integrated circuit using an infrared laser probe | |
WO2010024324A1 (en) | Semiconductor inspection device and inspection method | |
Phang et al. | A review of laser induced techniques for microelectronic failure analysis | |
Breitenstein et al. | Thermal failure analysis by IR lock-in thermography | |
US7045786B2 (en) | Method of photocarrier radiometry of semiconductors | |
Isenberg et al. | Spatially resolved evaluation of power losses in industrial solar cells by illuminated lock‐in thermography | |
Yazawa et al. | Time-resolved thermoreflectance imaging for thermal testing and analysis | |
JP3175766B2 (en) | Non-destructive inspection device and non-destructive inspection method | |
KR20190057271A (en) | Semiconductor device inspection method and semiconductor device inspection apparatus | |
Tay et al. | Lock-in thermography application in flip-chip packaging for short defect localization | |
Tominaga et al. | Application of Visible ThermoDynamic Imaging Technology for Hotspot Detection in Failure Analysis | |
US4640626A (en) | Method and apparatus for localizing weak points within an electrical circuit | |
Tan et al. | Fault localization using infra-red lock-in thermography for SOI-based advanced microprocessors | |
Kim et al. | Backside thermal fault localization using laser scanning confocal thermoreflectance microscopy based on auto-balanced detection | |
JP2004327858A (en) | Method and device for inspecting semiconductor device | |
RU2392687C1 (en) | Method of inspecting integrated circuits | |
Koshikawa et al. | Application to thermal analysis using optical probe technique | |
RU2187173C2 (en) | Device for checking hidden interface between contacting surfaces (alternatives) | |
JP5333150B2 (en) | Electrostatic analysis method and electrostatic analysis apparatus | |
Breitenstein | Lock-in IR thermography for functional testing of solar cells and electronic devices |