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Chang et al., 2010 - Google Patents

A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

Chang et al., 2010

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Document ID
15142247896592566967
Author
Chang T
Chang C
Lee H
Lee P
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n- type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open- circuit voltage (V oc). The measured V oc is up to 0.71 V under simulated air mass 1.5 …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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