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Sun et al., 2019 - Google Patents

Synthesis, crystal structure, and photoluminescence characteristics of high-efficiency deep-red emitting Ba2GdTaO6: Mn4+ phosphors

Sun et al., 2019

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Document ID
14813231324164663088
Author
Sun Q
Wang S
Devakumar B
Sun L
Liang J
Huang X
Publication year
Publication venue
ACS omega

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In this article, a series of novel Mn4+-doped Ba2GdTaO6 (BGT) red-emitting phosphors were successfully synthesized via a high-temperature solid-state method. The crystal structure, morphology, and luminescent performance of the samples were investigated in …
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208Calcium oxide or oxide-forming salts thereof, e.g. lime
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/7734Aluminates; Silicates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • Y02B20/00Energy efficient lighting technologies
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