[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wang et al., 2023 - Google Patents

Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles

Wang et al., 2023

Document ID
14664228898814872555
Author
Wang L
Xie J
Wen D
Publication year
Publication venue
Physical Chemistry Chemical Physics

External Links

Snippet

Resistive random access memory has been widely studied as a powerful candidate for building future memories and realizing high-efficiency artificial neuromorphic systems. In this paper, gold nanoparticles (Au NPs) are doped in a leaf solution of Scindapsus aureus (SA) …
Continue reading at pubs.rsc.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/145—Oxides or nitrides
    • H01L45/146—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12—Details
    • H01L45/122—Device geometry
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/16—Manufacturing
    • H01L45/1608—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/08—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on migration or redistribution of ionic species, e.g. anions, vacancies

Similar Documents

Publication Publication Date Title
Ryu et al. Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering
Rahmani et al. Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
Sun et al. Multistate resistive switching behaviors for neuromorphic computing in memristor
Qi et al. A nonvolatile organic resistive switching memory based on lotus leaves
Zhu et al. Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor
Wang et al. Biomemristors-based synaptic devices for artificial intelligence applications
Wang et al. Switching-enhanced RRAM for reliable synaptic simulation and multilevel data storage
Ranjan et al. Passive filters for nonvolatile storage based on capacitive-coupled memristive effects in nanolayered organic–inorganic heterojunction devices
Ismail et al. Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
Liu et al. Multilevel resistive switching memristor based on silk fibroin/graphene oxide with image reconstruction functionality
Li et al. Electronic synaptic characteristics and simulation application of Ag/CeO2/Pt memristor
Wang et al. Bioresistive random-access memory with gold nanoparticles that generate the coulomb blocking effect can realize multilevel data storage and synapse simulation
Sun et al. Physically transient memristive synapse with short-term plasticity based on magnesium oxide
Kim et al. Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
Mohanty et al. Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system
Wang et al. Soybean-Based memristor for multilevel data storage and emulation of synaptic behavior
Ismail et al. Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing
Cao et al. Fully physically transient volatile memristor based on Mg/magnesium oxide for biodegradable neuromorphic electronics
Kim et al. Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineering
Kim et al. Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx) NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers
Wang et al. Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles
Wang et al. Silkworm hemolymph resistance random access memory with high stability and low power consumption
Ismail et al. Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
CN111477740B (en) Polymer/quantum dot film memristor capable of simulating nerve synapses and preparation method thereof
He et al. Biodegradable natural chitosan coating films-based flexible resistive switching memory for transient electronics