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Lin et al., 2021 - Google Patents

Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor

Lin et al., 2021

Document ID
14663734896064914969
Author
Lin Y
Huang J
Publication year
Publication venue
Journal of the Korean Physical Society

External Links

Snippet

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are fabricated using a developed highly selective process and then characterized. The AlGaAs/InGaAs HEMTs undergo (NH 4) 2 S x treatment prior to gate metal deposition. The experimental results demonstrate that …
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