Razeghi et al., 2010 - Google Patents
Type-II antimonide-based superlattices for the third generation infrared focal plane arraysRazeghi et al., 2010
- Document ID
- 14448669706504671018
- Author
- Razeghi M
- Huang E
- Nguyen B
- Pour S
- Delaunay P
- Publication year
- Publication venue
- Infrared Technology and Applications XXXVI
External Links
Snippet
In recent years, the type-II superlattice (T2SL) material platform has seen incredible growth in the understanding of its material properties which has lead to unprecedented development in the arena of device design. Its versatility in band-structure engineering is …
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony 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 [Sb] 0 title description 5
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
- H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AIGaAs or InP/GainAs solar cells
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
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