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Holland et al., 1986 - Google Patents

Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2

Holland et al., 1986

Document ID
14444494729006815019
Author
Holland S
Hu C
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

In this study we investigate the effects of oxidation and post-oxidation annealing temperatures on the breakdown of thin (~ 25 nm) SiO2 dielectrics. We report a correlation between the amount of charge injected during high-field stressing necessary for breakdown …
Continue reading at iopscience.iop.org (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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