[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Zhu et al., 2024 - Google Patents

PSO-Aided Inverse Design of Silicon Modulator

Zhu et al., 2024

View PDF
Document ID
14103768262413380725
Author
Zhu Z
Zhao Y
Sheng Z
Gan F
Publication year
Publication venue
IEEE Photonics Journal

External Links

Snippet

Optimizing doping profiles has always been a key approach to enhance the performance of silicon modulators. Nevertheless, the pursuit of innovative profiles has encountered barriers in recent times. To tackle this issue, the idea of inverse design, widely adopted in passive …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35—Non-linear optics

Similar Documents

Publication Publication Date Title
Liow et al. Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization
Akiyama et al. Compact PIN-diode-based silicon modulator using side-wall-grating waveguide
CN103226252B (en) A kind of doped structure that improves depletion type silicon-based electro-optical modulator modulation efficiency
US9804426B2 (en) Silicon-germanium electro-absorption modulator
US20130126941A1 (en) Semiconductor optical device
JPH10335758A (en) Three dimensional periodic structure its manufacture and manufacture of film
JP2012013935A (en) Semiconductor optical element
Spector et al. Operation and optimization of silicon-diode-based optical modulators
Png et al. Numerical modeling and analysis for high-efficiency carrier-depletion silicon rib-waveguide phase shifters
Zhu et al. PSO-Aided Inverse Design of Silicon Modulator
Cui et al. High performance Ge-on-Si photodetector with optimized light field distribution by dual-injection
Fan et al. Active terahertz plasmonic crystal waveguide based on double-structured Schottky grating arrays
Zhu et al. Silicon modulator based on omni junctions by effective 3D Monte-Carlo method
CN108153001B (en) Large-bandwidth silicon-based optical modulator
US20230296831A1 (en) Hybrid metal oxide semiconductor capacitor with enhanced phase tuning
Xue-Jun et al. High-speed 2× 2 silicon-based electro-optic switch with nanosecond switch time
Azadeh et al. Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators
Ming et al. Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method
Zhu et al. Efficient G-shaped silicon modulator by inverse design of doping profile
Kashima et al. Proposal of Compact Tunable 1× 2 Multimode Interference Splitter Based on Multiple Quantum Well
Han et al. High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer
Sakuma et al. High Performance Si and InP/EO Polymer Hybrid Optical Modulators for Data Communication and Computing
Tu et al. A high-performance Si-based MOS electrooptic phase Modulator with a shunt-capacitor configuration
Zhu et al. High-efficiency silicon modulator of horizontal S-shaped profile
Xiao et al. Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk