Saito et al., 2007 - Google Patents
Large Grain Niobium Cavity R&D in Asia and the FutureSaito et al., 2007
View PDF- Document ID
- 14199728752621506676
- Author
- Saito K
- Furuta F
- Saeki T
- Inoue H
- Shim J
- Ahn J
- Kim E
- Xu Q
- Zong Z
- Gao J
- Kneisel P
- Myneni G
- Publication year
External Links
Snippet
The status of the large grain niobium cavity R&D in Asia and the future scope are presented. Recently KEK has received CBMM and NingXia large grain niobium sheets through collaborations. KEK has fabricated 1.3 GHz single cell cavities using these materials and …
- 239000010955 niobium 0 title abstract description 39
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8324134B2 (en) | Method of manufacturing superconducting radio-frequency acceleration cavity | |
EP1591556B1 (en) | METHOD FOR PRODUCTION OF Ta SPUTTERING TARGET | |
EP1662549B1 (en) | Method for manufacturing bonded wafer | |
US8088714B2 (en) | Method for production of hollow bodies for resonators | |
CN101118845B (en) | Method for producing bonded wafer | |
JP2007251129A5 (en) | ||
EP3118889B1 (en) | Process for producing bonded soi wafer | |
Singer et al. | Hydroforming of elliptical cavities | |
CN111515618A (en) | Processing method of high-purity niobium material with high RRR value and niobium material for radio frequency superconducting cavity | |
KR102369392B1 (en) | Silicon block quality determination method, silicon block quality determination program and silicon single crystal manufacturing method | |
Saito et al. | Large Grain Niobium Cavity R&D in Asia and the Future | |
JP2008004821A (en) | Method for manufacturing laminated wafer | |
KR101613349B1 (en) | Preparation method of reuse ta targets for semiconductors and the ta sputtering target prepared thereby | |
Kneisel et al. | Preliminary results from single crystal and very large crystal niobium cavities | |
Grassellino et al. | Fermilab experience of post-annealing losses in SRF niobium cavities due to furnace contamination and the ways to its mitigation: a pathway to processing simplification and quality factor improvement | |
Zhan-Guo et al. | Experimental study on SC RF cavities by using China large grain niobium for ILC | |
Kneisel et al. | Development of large grain/single crystal niobium cavity technology at Jefferson Lab | |
Zhan-Guo et al. | Study on the 1.3 GHz low loss shape superconducting cavities at IHEP | |
Yamanaka et al. | Hydroforming SRF cavities from seamless niobium tubes | |
JP6888294B2 (en) | Manufacturing method of Cu-Ga alloy sputtering target and Cu-Ga alloy sputtering target | |
Dohmae et al. | Investigation of SRF elliptical cavities made by new Nb materials in KEK | |
Palmieri | Spinning of Tesla-type cavities: status of art | |
CN113878408B (en) | Processing technology of stress-relieving layer of reinforced glass | |
Hao et al. | Improving gradient of 9-cell SRF cavities at Peking University | |
US20240010502A1 (en) | Polycrystal silicon rod, polycrystal silicon rod production method, and polycrystal silicon thermal processing method |