Zhang et al., 2016 - Google Patents
Mesa-top quantum dot single photon emitter arrays: Growth, optical characteristics, and the simulated optical response of integrated dielectric nanoantenna …Zhang et al., 2016
View HTML- Document ID
- 14155247946733992002
- Author
- Zhang J
- Chattaraj S
- Lu S
- Madhukar A
- Publication year
- Publication venue
- Journal of Applied Physics
External Links
Snippet
Nanophotonic quantum information processing systems require spatially ordered, spectrally uniform single photon sources (SPSs) integrated on-chip with co-designed light manipulating elements providing emission rate enhancement, emitted photon guidance, and …
- 230000003287 optical 0 title abstract description 26
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Arakawa et al. | Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview | |
Gurioli et al. | Droplet epitaxy of semiconductor nanostructures for quantum photonic devices | |
Heindel et al. | Quantum dots for photonic quantum information technology | |
Rodt et al. | Deterministically fabricated solid-state quantum-light sources | |
Zhang et al. | Mesa-top quantum dot single photon emitter arrays: Growth, optical characteristics, and the simulated optical response of integrated dielectric nanoantenna-waveguide systems | |
Holewa et al. | Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths | |
Zhang et al. | Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement | |
Hsu et al. | Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots | |
Xia et al. | Enhanced single-photon emission from GaN quantum dots in bullseye structures | |
De Luca et al. | Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy | |
Fonseka et al. | Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires | |
McCabe et al. | Techniques for epitaxial site-selective growth of quantum dots | |
Danang Birowosuto et al. | Design for ultrahigh-Q position-controlled nanocavities of single semiconductor nanowires in two-dimensional photonic crystals | |
Kaniber et al. | Efficient spatial redistribution of quantum dot spontaneous emission from two-dimensional photonic crystals | |
Zhang et al. | Highly pure single photon emission from spectrally uniform surface-curvature directed mesa top single quantum dot ordered array | |
Zhao et al. | Advanced technologies for quantum photonic devices based on epitaxial quantum dots | |
Bulgarini et al. | Far field emission profile of pure wurtzite InP nanowires | |
Regler et al. | Emission redistribution from a quantum dot-bowtie nanoantenna | |
Zhang et al. | Fabrication of InAs quantum dots in AlAs∕ GaAs DBR pillar microcavities for single photon sources | |
Peter et al. | High-Q whispering-gallery modes in GaAs∕ AlOx microdisks | |
Li et al. | Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode | |
Unsleber et al. | Bulk AlInAs on InP (111) as a novel material system for pure single photon emission | |
Dusanowski et al. | Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures | |
Bhattacharya et al. | Self-assembly in semiconductor epitaxy: from growth mechanisms to device applications | |
Bucci et al. | Zincblende InAs x P1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission |