Fritzsche et al., 1970 - Google Patents
Electronic conduction in amorphous semiconductors and the physics of the switching phenomenaFritzsche et al., 1970
View PDF- Document ID
- 13931974398517319069
- Author
- Fritzsche H
- Ovshinsky S
- Publication year
- Publication venue
- Journal of Non-Crystalline Solids
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Snippet
A three-fold classification of amorphous semiconductors into (i) elemental,(ii) covalent alloys, and (iii) ionic and tightly bound amorphous materials is proposed. The experimental evidence supporting a simple band model for the amorphous covalent alloys is presented …
- 239000004065 semiconductor 0 title abstract description 17
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- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
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