[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Greffe et al., 2022 - Google Patents

Characterization of low light performance of a complementary metal-oxide semiconductor sensor for ultraviolet astronomical applications

Greffe et al., 2022

Document ID
13745819615990139993
Author
Greffe T
Smith R
Sherman M
Harrison F
Earnshaw H
Grefenstette B
Hennessy J
Nikzad S
Publication year
Publication venue
Journal of Astronomical Telescopes, Instruments, and Systems

External Links

Snippet

Complementary metal-oxide semiconductor (CMOS) detectors offer many advantages over charge-coupled devices (CCDs) for optical and ultraviolet (UV) astronomical applications, especially in space where high radiation tolerance is required. However, astronomical …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369—SSIS architecture; Circuitry associated therewith
    • H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infra-red radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechnical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0414—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using plane or convex mirrors, parallel phase plates, or plane beam-splitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
    • G01J3/28—Investigating the spectrum

Similar Documents

Publication Publication Date Title
Moore et al. Interpixel capacitance in nondestructive focal plane arrays
Hopkinson et al. A guide to the use and calibration of detector array equipment
Drlica-Wagner et al. Characterization of skipper CCDs for cosmological applications
Goebel et al. Overview of the SAPHIRA detector for adaptive optics applications
Finger et al. Interpixel capacitance in large format CMOS hybrid arrays
Hull et al. Hybrid CMOS detectors for the Lynx x-ray surveyor high definition x-ray imager
Soman et al. Design and characterisation of the new CIS115 sensor for JANUS, the high resolution camera on JUICE
Villalpando et al. Characterization and optimization of skipper ccds for the soar integral field spectrograph
Greffe et al. Characterization of low light performance of a complementary metal-oxide semiconductor sensor for ultraviolet astronomical applications
Qiu et al. Evaluation of a scientific CMOS camera for astronomical observations
Miller et al. The high-speed X-ray camera on AXIS
Janesick et al. Mk x Nk gated CMOS imager
Djazovski et al. Electron-multiplying CCDs for future space instruments
Greffe et al. Characterization of low light performance of a CMOS Sensor for ultraviolet astronomical applications
Lin et al. Multi-amplifier sensing charge-coupled devices for next generation spectroscopy
Kenter et al. Advancing the technology of monolithic CMOS detectors for use as x-ray imaging spectrometers
Daigle et al. The darkest EMCCD ever
Williams Jr et al. Back-illuminated and electron-bombarded CCD low-light-level imaging system performance
Barton et al. Signal to noise ratio of Raman spectra of biological samples
Gravrand et al. Fabrication and characterization of a high performance NIR 2kx2k MCT array at CEA and Lynred for astronomy applications
Kenter et al. Monolithic CMOS detectors for use as x-ray imaging spectrometers
Finger et al. Performance evaluation and calibration issues of large format infrared hybrid active pixel sensors used for ground-and space-based astronomy
Simms Hybrid CMOS SiPIN detectors as astronomical imagers
Lin et al. Sub-electron noise multi-amplifier sensing CCDs for spectroscopy
Robledo et al. Noise characterization of megapixel quanta image sensor for scientific applications