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Sheng et al., 1982 - Google Patents

Deep levels in ion‐implanted Si after beam annealing

Sheng et al., 1982

Document ID
13660696594127850007
Author
Sheng N
Mizuta M
Merz J
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Deep level transient spectroscopy has been utilized to study the electronic defect levels in cw laserannealed and scanning electron-beam-annealed Si after ion implantation. For cw laser annealing, a dominant hole trap, whose concentration increases by more than one …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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