[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Li et al., 2020 - Google Patents

Modeling and analysis of bridge-leg crosstalk of GaN HEMT considering nonlinear junction capacitances

Li et al., 2020

Document ID
13540032246455638489
Author
Li B
Wang G
Liu S
Zhao N
Zhang G
Zhang X
Xu D
Publication year
Publication venue
IEEE Transactions on Power Electronics

External Links

Snippet

Gallium nitride high electron mobility transistor (GaN HEMT) has fast switching speed and low threshold voltage, which could result in a severe false triggering voltage pulse at the synchronous freewheeling transistor in bridge-leg circuit when the control transistor turns on …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M2001/0003—Details of control, feedback and regulation circuits
    • H02M2001/0009—Devices and circuits for detecting current in a converter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—INDEXING SCHEME RELATING TO CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. INCLUDING HOUSING AND APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion
    • Y02B70/14—Reduction of losses in power supplies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—INDEXING SCHEME RELATING TO CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. INCLUDING HOUSING AND APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion
    • Y02B70/12—Power factor correction technologies for power supplies

Similar Documents

Publication Publication Date Title
Li et al. High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance
Li et al. Modeling and analysis of bridge-leg crosstalk of GaN HEMT considering nonlinear junction capacitances
Zhao et al. Adaptive multi-level active gate drivers for SiC power devices
Mao et al. Balancing of peak currents between paralleled SiC MOSFETs by drive-source resistors and coupled power-source inductors
Zeng et al. Comparative study on multiple degrees of freedom of gate drivers for transient behavior regulation of SiC MOSFET
Duan et al. Improved SiC power MOSFET model considering nonlinear junction capacitances
Wang et al. An improved active crosstalk suppression method for high-speed SiC MOSFETs
Wang et al. An analysis of high-power IGBT switching under cascade active voltage control
Brandelero et al. A non-intrusive method for measuring switching losses of GaN power transistors
Liang et al. An improved analytical model for predicting the switching performance of SiC MOSFETs
Liu et al. Equivalent circuit models and model validation of SiC MOSFET oscillation phenomenon
Li et al. Switching characteristic analysis and application assessment of SiC MOSFET with common source inductance and Kelvin source connection
Zeng et al. Impedance-oriented transient instability modeling of SiC MOSFET intruded by measurement probes
Sun et al. Modeling, Design, and Evaluation of Active $\mathrm {\text {} d} v/\mathrm {\text {} d} t $ Balancing for Series-Connected SiC MOSFET s
Chen et al. The sustained oscillation modeling and its quantitative suppression methodology for GaN devices
Tu et al. Analytical evaluation of IGBT turn-on loss with double pulse testing
Zhang et al. Miller capacitance cancellation to improve SiC MOSFET's performance in a phase-leg configuration
Wang et al. Comprehensive analysis of paralleled sic mosfets current imbalance under asynchronous gate signals
Long et al. Analysis and suppression of high speed dv/dt induced false turn-on in GaN HEMT phase-leg topology
Liu et al. Switching current imbalance mitigation for paralleled SiC MOSFETs using common-mode choke in gate loop
Bulut et al. Simplified method to analyze drive strengths for GaN power devices
Tu et al. Research on parallel current sharing scheme of 1200V/100A SiC MOSFET
Zhuolin et al. A simple SiC power MOSFET model
Wei et al. Drive parameters analysis considering the crosstalk effect of silicon carbide MOSFET in a Phase-leg configuration
Shi et al. Time-Domain and Frequency-Domain Analysis of SiC MOSFET Switching Transients Considering Transmission of Control, Drive, and Power Pulses